US 11,947,261 B2
Method for making photolithography mask plate
Mo Chen, Beijing (CN); Qun-Qing Li, Beijing (CN); Li-Hui Zhang, Beijing (CN); Yuan-Hao Jin, Beijing (CN); Dong An, Beijing (CN); and Shou-Shan Fan, Beijing (CN)
Assigned to Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed by Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,220.
Application 17/150,220 is a continuation of application No. 16/734,440, filed on Jan. 6, 2020, granted, now 10,942,453.
Application 16/734,440 is a continuation of application No. 15/684,350, filed on Aug. 23, 2017, granted, now 10,571,798, issued on Feb. 25, 2020.
Claims priority of application No. 201611095319.2 (CN), filed on Dec. 1, 2016.
Prior Publication US 2021/0132500 A1, May 6, 2021
Int. Cl. G03F 1/50 (2012.01); G03F 1/00 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01)
CPC G03F 7/20 (2013.01) [G03F 1/00 (2013.01); G03F 1/48 (2013.01); G03F 1/50 (2013.01); G03F 7/30 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of making photolithography mask plate, comprising:
providing a carbon nanotube layer comprising holes located on a first substrate;
depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer comprises a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the first substrate corresponding to the holes of the carbon nanotube layer;
transferring the carbon nanotube layer with the first patterned chrome layer thereon from the first substrate to a second substrate, the carbon nanotube layer is directly contacted with a surface of the second substrate; and
depositing a cover layer on the first patterned chrome layer.