US 11,947,255 B2
Method for making photolithography mask plate
Mo Chen, Beijing (CN); Qun-Qing Li, Beijing (CN); Li-Hui Zhang, Beijing (CN); Yuan-Hao Jin, Beijing (CN); Dong An, Beijing (CN); and Shou-Shan Fan, Beijing (CN)
Assigned to Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed by Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,229.
Application 17/150,229 is a continuation of application No. 16/734,441, filed on Jan. 6, 2020, granted, now 10,942,454.
Application 16/734,441 is a continuation of application No. 15/684,428, filed on Aug. 23, 2017, granted, now 10,606,167, issued on Mar. 31, 2020.
Claims priority of application No. 201611093541.9 (CN), filed on Dec. 1, 2016.
Prior Publication US 2021/0165329 A1, Jun. 3, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/54 (2012.01); G03F 1/50 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H10K 71/20 (2023.01)
CPC G03F 1/54 (2013.01) [G03F 1/50 (2013.01); G03F 7/20 (2013.01); H01L 21/0276 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H10K 71/233 (2023.02)] 13 Claims
 
1. A method of making photolithography mask plate, comprising:
providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure comprises a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer;
locating the carbon nanotube composite structure on a substrate to expose partial surfaces of the substrate; and
depositing a cover layer on the carbon nanotube composite structure.