CPC G01N 21/6489 (2013.01) [G01N 21/6402 (2013.01); G01N 21/9501 (2013.01); G01N 2201/06113 (2013.01)] | 11 Claims |
1. A method for determining the thermal donor concentration of a test sample made of a semiconductor material, comprising:
providing a reference sample made of the same semiconductor material and having a known thermal donor concentration;
measuring with a photoluminescence tool a photoluminescence signal of the reference sample for at least one photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV;
determining, from the photoluminescence signal of the reference sample, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak;
measuring with the photoluminescence tool a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV;
determining from the photoluminescence signal of the test sample a specific value of said parameter; and
determining the thermal donor concentration of the test sample from the specific value of said parameter by using said experimental relationship.
|