	US 11,946,135 B2
	Low temperature deposition of iridium containing films
Feng Q. Liu, San Jose, CA (US); Hua Chung, San Jose, CA (US); Schubert Chu, San Francisco, CA (US); Mei Chang, Saratoga, CA (US); Jeffrey W. Anthis, San Jose, CA (US); and David Thompson, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 27, 2023, as Appl. No. 18/190,246.
Application 18/190,246 is a division of application No. 16/129,232, filed on Sep. 12, 2018, granted, now 11,643,721.
Claims priority of provisional application 62/557,486, filed on Sep. 12, 2017.
Prior Publication US 2023/0227968 A1, Jul. 20, 2023
Int. Cl. C23C 16/42 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); C23C 16/507 (2006.01); C23C 16/513 (2006.01); C23C 16/52 (2006.01)

CPC C23C 16/42 (2013.01) [C23C 16/14 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/507 (2013.01); C23C 16/513 (2013.01); C23C 16/52 (2013.01)]

14 Claims

1. A method of depositing an iridium silicide film, the method comprising exposing a substrate surface maintained at a temperature in the range of about −25° C. to less than 300° C. to iridium hexafluoride and a silicon precursor, wherein the entire substrate surface is maintained at the temperature in the range of about −25° C. to less than 300° C. during the method, wherein the substrate surface comprises a first material consisting essentially of silicon and a second material comprising silicon oxide, silicon nitride or Al₂O₃and the iridium silicide film is deposited selectively on the first material over the second material at a rate 15 times greater on the first material over the second material.