US 12,268,101 B2
Superconductor composites and devices comprising same
Yachin Ivry, Haifa (IL); and Mohammad Suleiman, Haifa (IL)
Assigned to TECHNION RESEARCH &DEVELOPMENT FOUNDATION LIMITED, Haifa (IL)
Appl. No. 17/762,554
Filed by TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED, Haifa (IL)
PCT Filed Sep. 22, 2020, PCT No. PCT/IL2020/051031
§ 371(c)(1), (2) Date Mar. 22, 2022,
PCT Pub. No. WO2021/053682, PCT Pub. Date Mar. 25, 2021.
Claims priority of provisional application 62/991,654, filed on Mar. 19, 2020.
Claims priority of provisional application 62/903,858, filed on Sep. 22, 2019.
Prior Publication US 2022/0376162 A1, Nov. 24, 2022
Int. Cl. H10N 60/81 (2023.01); H10N 60/01 (2023.01); H10N 60/80 (2023.01)
CPC H10N 60/815 (2023.02) [H10N 60/0912 (2023.02); H10N 60/805 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A method of manufacturing a composition comprising one or more amorphous superconductor layer bound to one or more substrate layer, wherein said one or more substrate layer comprises any of: a Van der Waals material, an amorphous material, or a combination thereof; and wherein said one or more amorphous superconductor layer is a continuous film, the method comprises the steps of:
a. introducing said substrate selected from Van der Waals material, amorphous material, or a combination thereof into an ambient of reduced pressure, wherein said substrate being under controlled temperature;
b. providing a target under conditions sufficient for sputtering, wherein said target comprises one or more elements selected from the group consisting of: tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), lanthanum (La), germanium (Ge), gallium (Ga), lead (Pb), beryllium (Be), zinc (Zn), ruthenium (Ru), rhodium (Rh), bismuth (Bi), indium (In), tin (Sn), palladium (Pd), gold (Au), osmium (Os), iridium (Ir), nitrogen (N), oxygen (O) and silicon (Si) or any combination thereof;
c. sputtering said one or more elements onto said substrate, thereby manufacturing the amorphous superconductor layer on said substrate; wherein said sputtering is performed at a temperature below 500 C.