US 12,268,099 B2
Magnetoresistive element and magnetic storage device
Shigemi Mizukami, Sendai (JP); Tomoki Tsuchiya, Sendai (JP); Kazuma Kunimatsu, Sendai (JP); and Tomohiro Ichinose, Sendai (JP)
Assigned to TOHOKU UNIVERSITY, Sendai (JP)
Appl. No. 17/616,085
Filed by TOHOKU UNIVERSITY, Sendai (JP)
PCT Filed Jun. 4, 2020, PCT No. PCT/JP2020/022166
§ 371(c)(1), (2) Date Dec. 2, 2021,
PCT Pub. No. WO2020/246553, PCT Pub. Date Dec. 10, 2020.
Claims priority of application No. 2019-105891 (JP), filed on Jun. 6, 2019.
Prior Publication US 2022/0320421 A1, Oct. 6, 2022
Int. Cl. H10N 50/85 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/85 (2023.02) [H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A magnetoresistive element comprising:
a first magnetic layer, whose magnetization direction is substantially fixed;
a second magnetic layer whose magnetization direction is changeable; and
a non-magnetic layer arranged between the first magnetic layer and the second magnetic layer, wherein
the magnetoresistive element is a tunnel magnetoresistive (TMR) element, and
the first magnetic layer and/or the second magnetic layer has an alloy having a bcc structure made of a transition metal and unavoidable impurities, and the alloy having the bcc structure contains Co, Mn and Fe, wherein the Co is a main component and the Fe is in an amount of 20 at % or less.