US 12,268,060 B2
Display device and method of providing the same
Yoon Ho Kim, Asan-si (KR); Jong Woo Park, Seongnam-si (KR); June Hwan Kim, Daejeon (KR); Tae Young Kim, Seongnam-si (KR); Ki Ju Im, Suwon-si (KR); and Eun Byul Jo, Daegu (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Aug. 12, 2021, as Appl. No. 17/400,274.
Claims priority of application No. 10-2020-0184673 (KR), filed on Dec. 28, 2020.
Prior Publication US 2022/0208923 A1, Jun. 30, 2022
Int. Cl. H10K 59/126 (2023.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01); H10K 59/124 (2023.01)
CPC H10K 59/126 (2023.02) [H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10K 59/124 (2023.02); H10K 59/1201 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate; and
in order from the substrate:
a recessed interlayer insulating layer in which a recess is defined, the recessed interlayer insulating layer including a side wall and an upper surface together defining the recess;
an oxide semiconductor active layer of a first transistor, in which a first through-hole is defined, the oxide semiconductor active layer including an inner wall defining the first through-hole;
a first gate insulating layer;
a first conductive layer;
a first interlayer insulating layer in which a second through-hole is defined corresponding to the first through-hole, the second through-hole together with the first through-hole defining portions of a through-hole corresponding to the recess of the recessed interlayer insulating layer; and
a second conductive layer connected to the oxide semiconductor active layer at the through-hole,
wherein at the through-hole, the second conductive layer which is connected to the oxide semiconductor active layer contacts the inner wall of the oxide semiconductor active layer and contacts both the side wall and the upper surface of the recessed interlayer insulating layer.