US 12,268,038 B2
Group III nitride semiconductor light emitting element and method of manufacturing the same
Yasuhiro Watanabe, Akita (JP)
Assigned to DOWA Electronics Materials Co., Ltd., Tokyo (JP)
Appl. No. 17/312,934
Filed by DOWA Electronics Materials Co., Ltd., Tokyo (JP)
PCT Filed Dec. 11, 2019, PCT No. PCT/JP2019/048537
§ 371(c)(1), (2) Date Jun. 11, 2021,
PCT Pub. No. WO2020/122137, PCT Pub. Date Jun. 18, 2020.
Claims priority of application No. 2018-234216 (JP), filed on Dec. 14, 2018; and application No. 2019-223516 (JP), filed on Dec. 11, 2019.
Prior Publication US 2022/0045239 A1, Feb. 10, 2022
Int. Cl. H10H 20/816 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01)
CPC H10H 20/8162 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/835 (2025.01); H10H 20/032 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A group III nitride semiconductor light emitting element, comprising:
a substrate;
an n-type semiconductor layer on the substrate;
a light emitting layer on the n-type semiconductor layer;
a p-type AlGaN electron blocking layer on the light emitting layer;
a p-type contact layer directly on the p-type AlGaN electron blocking layer; and
a p-side reflection electrode on the p-type contact layer, wherein:
a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 280 nm or smaller;
an Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller;
a film thickness of the p-type contact layer is 10 nm or greater and 25 nm or smaller; and
the p-type contact layer has a p-type AlGaN contact layer having an Al composition ratio of 0.03 or greater and 0.25 or smaller.