US 12,268,034 B2
SPAD pixel structure and method of manufacturing same
Byoung Soo Choi, Suwon-si (KR)
Assigned to DB HiTek Co., Ltd., Bucheon-si (KR)
Filed by DB HiTek Co., Ltd., Bucheon-si (KR)
Filed on Jan. 11, 2022, as Appl. No. 17/573,412.
Claims priority of application No. 10-2021-0025375 (KR), filed on Feb. 25, 2021.
Prior Publication US 2022/0271183 A1, Aug. 25, 2022
Int. Cl. H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01)
CPC H10F 30/225 (2025.01) [H10F 39/011 (2025.01); H10F 39/811 (2025.01); H10F 71/139 (2025.01); H10F 77/206 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A SPAD pixel structure comprising:
a substrate having a front surface and a back surface on which light is incident;
a second conductivity type first impurity region across a plurality of unit pixels in the substrate;
a second conductivity type second impurity region in each of the plurality of unit pixels in the substrate on the first impurity region;
a first conductivity type anode contact in each of the unit pixels between the front surface of the substrate and the second impurity region;
a connection region extending from the back surface of the substrate to a back surface of the first impurity region and comprising a conductive metal;
an insulating layer on the back surface of the substrate; and
metal wires or lines in a matrix on a back surface of the insulating layer.