US 12,268,033 B1
Self-powered ultraviolet photodetection performance using Au/Ta2O5/GAN: metal-insulator-semiconductor (MIS) heterostructure
Sambasivam Sangaraju, Al Ain (AE); and Nanda Kumar Reddy Nallabala, Al Ain (AE)
Assigned to UNITED ARAB EMIRATES UNIVERSITY, Al Ain (AE)
Filed by United Arab Emirates University, Al Ain (AE)
Filed on Apr. 19, 2024, as Appl. No. 18/640,734.
Int. Cl. H10F 30/222 (2025.01); C23C 14/04 (2006.01); C23C 14/08 (2006.01); C23C 14/18 (2006.01); C23C 14/30 (2006.01); C23C 14/58 (2006.01); C30B 25/18 (2006.01); H10F 10/16 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01)
CPC H10F 30/222 (2025.01) [C23C 14/042 (2013.01); C23C 14/083 (2013.01); C23C 14/18 (2013.01); C23C 14/30 (2013.01); C23C 14/5806 (2013.01); C30B 25/183 (2013.01); H10F 10/16 (2025.01); H10F 71/128 (2025.01); H10F 77/206 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising the steps of:
a. growing a silicon-doped n-GaN epitaxial layer on an un-doped GaN/sapphire sample to form a n-GaN sample;
b. cleaning the n-GaN epitaxial layer of the n-GaN sample to remove surface oxides;
c. pelletizing and depositing tantalum pentoxide (Ta2O5) powder on the n-GaN sample to form an Ta2O5/GaN stack comprising a Ta2O5 film;
d. post-annealing the formed Ta2O5/GaN stack; and
e. depositing high purity Au on the Ta2O5/GaN stack to form the ultraviolet (UV) photodetector (PD) device.