US 12,268,021 B1
Power MOSFET with gate-source ESD diode structure
Wan-Yu Kai, New Taipei (TW); Chia-Wei Hu, New Taipei (TW); and Ta-Chuan Kuo, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on Jun. 4, 2024, as Appl. No. 18/733,821.
Application 18/733,821 is a division of application No. 18/416,776, filed on Jan. 18, 2024, granted, now 12,154,941.
Int. Cl. H01L 29/861 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 89/60 (2025.01)
CPC H10D 62/109 (2025.01) [H10D 30/668 (2025.01); H10D 64/513 (2025.01); H10D 89/611 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
growing an epitaxial layer over a substrate;
forming a plurality of gates in the epitaxial layer;
forming a breakdown voltage enhancement and leakage prevention structure in the epitaxial layer, comprising a plurality of n-type wells and a plurality of p-type wells arranged in an alternating manner, and a body ring structure;
forming a source in the epitaxial layer and a gate-source Electrostatic Discharge (ESD) diode structure over the epitaxial layer;
forming a source contact connected to the source and a first terminal of the gate-source ESD diode structure, and a gate contact connected to the plurality of gates and a second terminal of the gate-source ESD diode structure; and
forming a drain contact on opposing sides of the epitaxial layer of the source contact.