a high-k metal gate (HKMG) structure comprising an upper HKMG structure and spaced-apart HKMG structures;

a stack comprising spaced-apart non-sacrificial nanosheets and the spaced-part HKMG structures;

wherein the stack further comprises a stack sidewall comprising sidewalls of end regions of the spaced-apart non-sacrificial nanosheets and sidewalls of end regions of the spaced-apart HKMG structures;

a S/D region adjacent to the stack;

a protective liner on a gate spacer and on a top surface of the S/D region; and

a uniform thickness S/D template layer comprising a first sidewall region, a bottom region, and a second sidewall region;

wherein a lateral width dimension of the upper HKMG structure is less than a lateral width dimension of at least one of the spaced-apart HKMG structures;

wherein a lateral thickness of the first sidewall region, a vertical thickness of the bottom region, and a lateral thickness of the second sidewall region are substantially equal; and

wherein the first sidewall region is between and physically separates the spaced-apart non-sacrificial nanosheets from the S/D region.