US 12,268,019 B2
Ferroelectric field-effect transistors with a hybrid well
Stefan Dünkel, Dresden (DE); Dominik Martin Kleimaier, Dresden (DE); Zhixing Zhao, Dresden (DE); and Halid Mulaosmanovic, Dresden (DE)
Assigned to GlobalFoundries Dresden Module One Limited Liability Company & Co. KG, Dresden (DE)
Filed by GlobalFoundries Dresden Module One Limited Liability Company & Co. KG, Dresden (DE)
Filed on Oct. 5, 2022, as Appl. No. 17/960,245.
Prior Publication US 2024/0120420 A1, Apr. 11, 2024
Int. Cl. H01L 29/66 (2006.01); H01L 21/74 (2006.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/17 (2025.01); H10D 64/68 (2025.01)
CPC H10D 30/701 (2025.01) [H01L 21/74 (2013.01); H10D 30/0415 (2025.01); H10D 62/371 (2025.01); H10D 64/689 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a semiconductor layer;
a dielectric layer arranged between the semiconductor layer and the semiconductor substrate;
a first well in the semiconductor substrate, the first well having a first conductivity type;
a second well in the semiconductor substrate, the second well having a second conductivity type opposite to the first conductivity type; and
a ferroelectric field-effect transistor comprising a gate structure on the semiconductor layer over the first well and the second well, the gate structure including a ferroelectric layer comprising a ferroelectric material.