CPC H10D 30/701 (2025.01) [H01L 21/74 (2013.01); H10D 30/0415 (2025.01); H10D 62/371 (2025.01); H10D 64/689 (2025.01)] | 20 Claims |
1. A structure comprising:
a semiconductor substrate;
a semiconductor layer;
a dielectric layer arranged between the semiconductor layer and the semiconductor substrate;
a first well in the semiconductor substrate, the first well having a first conductivity type;
a second well in the semiconductor substrate, the second well having a second conductivity type opposite to the first conductivity type; and
a ferroelectric field-effect transistor comprising a gate structure on the semiconductor layer over the first well and the second well, the gate structure including a ferroelectric layer comprising a ferroelectric material.
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