US 12,268,015 B2
Semiconductor structures
Kai Cheng, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/613,628
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Jul. 21, 2020, PCT No. PCT/CN2020/103334
§ 371(c)(1), (2) Date Nov. 23, 2021,
PCT Pub. No. WO2022/016390, PCT Pub. Date Jan. 27, 2022.
Prior Publication US 2022/0320326 A1, Oct. 6, 2022
Int. Cl. H10D 62/824 (2025.01); H10D 30/47 (2025.01); H10D 62/815 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/4738 (2025.01) [H10D 62/8164 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a channel layer; and
a barrier layer provided on the channel layer,
wherein the barrier layer comprises multiple barrier sub-layers arranged in a stack, the multiple barrier sub-layers comprise at least three barrier sub-layers, and Al component proportions of the multiple barrier sub-layers vary along a growth direction of the barrier layer for at least one up-and-down fluctuation;
wherein the Al component proportions of the multiple barrier sub-layers are from 0 to 1.