	US 12,268,013 B2
	High-resistance resistor based on silicon carbide and manufacturing method thereof
Yuying Xi, Jinzhong (CN); Yanxia Cui, Jinzhong (CN); Kun Hu, Jinzhong (CN); Yuan Tian, Jinzhong (CN); Guohui Li, Jinzhong (CN); and Bingshe Xu, Jinzhong (CN)
Assigned to Talyuan University of Technology, Taiyuan (CN); and Institute of New Materials and Chemical Engineering, Zhejiang University, Shanxi, Taiyuan (CN)
Filed by Taiyuan University of Technology, Taiyuan (CN); and Institute of New Materials and Chemical Engineering, Zhejiang University, Shanxi, Taiyuan (CN)
Filed on Aug. 11, 2022, as Appl. No. 17/885,570.
Claims priority of application No. 202210294747.7 (CN), filed on Mar. 23, 2022.
Prior Publication US 2023/0317770 A1, Oct. 5, 2023
Int. Cl. H01L 49/02 (2006.01); H01L 21/02 (2006.01); H10D 1/47 (2025.01)

CPC H10D 1/472 (2025.01) [H01L 21/02052 (2013.01); H01L 21/02178 (2013.01); H01L 21/02266 (2013.01); H01L 21/0228 (2013.01)]

4 Claims

1. A high-resistance resistor based on silicon carbide, comprising:

a semi-insulating 4H—SiC silicon carbide substrate; wherein a silicon surface and a carbon surface of the semi-insulating 4H—SiC silicon carbide substrate are provided with aluminum oxide insulating layers, wherein the aluminum oxide insulating layers are symmetrical and atomic-thickness; thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm; conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation; and thicknesses of the conductive metal electrodes are 100 nm-500 nm.