US 12,268,008 B2
3D non-volatile memory, operating method of the same and manufacturing method of the same
Sanghun Jeon, Daejeon (KR); and Youngin Goh, Daejeon (KR)
Assigned to Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed by Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed on May 12, 2022, as Appl. No. 17/743,314.
Claims priority of application No. 10-2021-0104281 (KR), filed on Aug. 9, 2021.
Prior Publication US 2023/0051142 A1, Feb. 16, 2023
Int. Cl. H10B 53/20 (2023.01)
CPC H10B 53/20 (2023.02) 18 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) non-volatile memory comprising:
a bit line formed to extend in a vertical direction; and
horizontal structures contacting the bit line while being formed to extend in a horizontal direction and being space in the vertical direction, wherein each of the horizontal structures includes a ferroelectric layer contacting the bit line, a middle metal layer surrounded by the ferroelectric layer, a dielectric layer surrounded by the middle metal layer, and a word line surrounded by the dielectric layer.