US 12,267,997 B2
Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts
Lifang Xu, Boise, ID (US); Sidhartha Gupta, Boise, ID (US); Kar Wui Thong, Boise, ID (US); and Harsh Narendrakumar Jain, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 22, 2023, as Appl. No. 18/394,273.
Application 18/394,273 is a continuation of application No. 17/205,954, filed on Mar. 18, 2021, granted, now 11,856,763.
Prior Publication US 2024/0147713 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 41/27 (2023.01); G11C 5/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 5/06 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising tiers of alternating conductive structures and insulative structures;
an additional stack structure vertically overlying the stack structure and comprising additional tiers of alternating conductive structures and insulative structures; and
lower pillars extending through the stack structure and upper pillars overlying the lower pillars and extending through the additional stack structure, the lower pillars exhibiting pillar bending in a first direction and a center of a lowermost surface of each upper pillar is aligned in the first direction with a center of an uppermost surface of a corresponding lower pillar, a center longitudinal axis through some of the upper pillars parallel to a center longitudinal axis through a corresponding lower pillar.