| CPC H10B 12/482 (2023.02) [H10B 12/485 (2023.02); H10B 12/50 (2023.02); H10D 64/021 (2025.01)] | 17 Claims |
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1. A semiconductor device, comprising:
a substrate;
a bit line structure positioned on the substrate;
a plurality of first bit line spacers positioned on sidewalls of the bit line structure;
a plurality of second bit line spacers positioned on the plurality of first bit line spacers;
wherein the plurality of first bit line spacers comprise one or more species of vanadium oxide;
wherein the plurality of second bit line spacers comprise silicon nitride, silicon nitride oxide, or silicon oxynitride;
wherein the bit line structure comprises:
a bit line bottom insulating layer positioned on the substrate and comprising silicon oxide;
a bit line dielectric layer positioned on the bit line bottom insulating layer and comprising a high dielectric constant material;
a bit line higher conductive layer positioned on the bit line dielectric layer and comprising tungsten, cobalt, zirconium, tantalum, titanium, aluminum, ruthenium, copper, metal carbides, metal nitrides, transition metal aluminides, or a combination thereof; and
a bit line capping layer positioned on the bit line higher conductive layer and comprising silicon nitride.
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