US 12,267,955 B2
Semiconductor device, power conversion apparatus, moving body, and method for producing semiconductor device
Takeshi Higashihata, Fukuoka (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/906,695
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed May 21, 2020, PCT No. PCT/JP2020/020057
§ 371(c)(1), (2) Date Sep. 19, 2022,
PCT Pub. No. WO2021/234892, PCT Pub. Date Nov. 25, 2021.
Prior Publication US 2023/0164915 A1, May 25, 2023
Int. Cl. H05K 1/11 (2006.01); B60R 16/02 (2006.01); H02M 7/00 (2006.01); H05K 1/18 (2006.01); H05K 3/34 (2006.01)
CPC H05K 1/111 (2013.01) [B60R 16/02 (2013.01); H02M 7/003 (2013.01); H05K 1/181 (2013.01); H05K 3/3442 (2013.01); H05K 3/3478 (2013.01); H05K 2201/09472 (2013.01); H05K 2201/10636 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating substrate on which a metal pattern having a first recess and a second recess that are provided side by side and a semiconductor element are disposed;
an electronic component partially disposed in the first recess; and
solder that connects the metal pattern and the electronic component.