US 12,267,611 B2
Solid-state imaging device and control method of the same
Toshiaki Ono, Kanagawa (JP); Yorito Sakano, Kanagawa (JP); and Masaki Sakakibara, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 18/017,105
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Jun. 15, 2021, PCT No. PCT/JP2021/022735
§ 371(c)(1), (2) Date Jan. 20, 2023,
PCT Pub. No. WO2022/024574, PCT Pub. Date Feb. 3, 2022.
Claims priority of application No. 2020-128380 (JP), filed on Jul. 29, 2020.
Prior Publication US 2023/0300495 A1, Sep. 21, 2023
Int. Cl. H04N 25/772 (2023.01); H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/778 (2023.01)
CPC H04N 25/772 (2023.01) [H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/778 (2023.01)] 24 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
a pixel array including a photoelectric conversion section that performs photoelectric conversion according to intensity of light received, the pixel array including a plurality of unit pixels capable of accumulating charge photoelectrically converted by the photoelectric conversion section in a predetermined floating diffusion region;
a system control circuit that controls the pixel array; and
a pixel signal reading circuit that reads a pixel signal based on the charge from the predetermined floating diffusion region of a unit pixel of the plurality of unit pixels via a read signal line under control of the system control circuit,
wherein the pixel signal reading circuit includes:
an AD converter that performs AD conversion on the pixel signal; and
a determination circuit that performs determination of brightness/darkness of light received by the unit pixel on a basis of the pixel signal read from the unit pixel in a determination phase, and
the determination circuit selectively controls executing or stopping of the AD conversion by the AD converter on a pixel signal read subsequent to the determination phase according to a result of the determination.