US 12,267,064 B2
Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
Ventsislav Yantchev, Sofia (BG)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Jan. 21, 2021, as Appl. No. 17/154,575.
Application 17/154,575 is a continuation of application No. 16/924,108, filed on Jul. 8, 2020, granted, now 10,992,284.
Application 16/924,108 is a continuation in part of application No. 16/689,707, filed on Nov. 20, 2019, granted, now 10,917,070, issued on Feb. 9, 2021.
Application 16/689,707 is a continuation of application No. 16/230,443, filed on Dec. 21, 2018, granted, now 10,491,192, issued on Nov. 26, 2019.
Claims priority of provisional application 62/753,815, filed on Oct. 31, 2018.
Claims priority of provisional application 62/748,883, filed on Oct. 22, 2018.
Claims priority of provisional application 62/741,702, filed on Oct. 5, 2018.
Claims priority of provisional application 62/701,363, filed on Jul. 20, 2018.
Claims priority of provisional application 62/685,825, filed on Jun. 15, 2018.
Prior Publication US 2021/0143794 A1, May 13, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/56 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H10N 30/87 (2023.01)
CPC H03H 9/568 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02031 (2013.01); H03H 9/02062 (2013.01); H03H 9/02228 (2013.01); H03H 9/132 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 3/02 (2013.01); H03H 2003/023 (2013.01); H03H 9/02039 (2013.01); H10N 30/877 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A filter device, comprising:
a plurality of resonators connected in a ladder filter circuit, each resonator of the plurality of resonators comprising an interdigital transducer (IDT) with interleaved fingers disposed on a respective piezoelectric diaphragm;
a first frequency setting dielectric layer having a first thickness disposed over and between the interleaved fingers of one or more IDTs of a first subset of the plurality of resonators; and
a second frequency setting dielectric layer having a second thickness greater than the first thickness disposed over and between the interleaved fingers of one or more IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical,
wherein each piezoelectric diaphragm and each IDT of the plurality of resonators are configured such that a respective radio frequency signal applied to the IDT excites a respective primary shear acoustic mode within the respective piezoelectric diaphragm.