US 12,267,050 B2
Power amplifier circuit, power amplifier device, and RF circuit module
Masatoshi Hase, Nagaokakyo (JP)
Assigned to Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed on Dec. 13, 2021, as Appl. No. 17/549,626.
Claims priority of application No. 2020-206717 (JP), filed on Dec. 14, 2020.
Prior Publication US 2022/0190795 A1, Jun. 16, 2022
Int. Cl. H03F 1/30 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01)
CPC H03F 3/245 (2013.01) [H03F 1/302 (2013.01); H03F 3/195 (2013.01); H03F 2200/451 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A power amplifier circuit comprising:
an amplifier transistor having a base to which a radio frequency signal is to be supplied and configured to amplify the radio frequency signal and output the amplified radio frequency signal;
a resistance element having a first end, and a second end electrically connected to the base of the amplifier transistor;
a first bias transistor having a collector to which a first voltage is to be applied, a base to which a first bias voltage is to be applied, and an emitter electrically connected to the first end of the resistance element and configured to supply a bias current to the base of the amplifier transistor through the resistance element;
a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first end of the resistance element, a base to which a second bias voltage is to be applied, and a collector to which a second voltage lower than the first voltage is to be applied; and
a reference circuit including
a first diode having an anode connected to the base of the first bias transistor, and a cathode,
a second diode having an anode connected to the cathode of the first diode, and a cathode connected to the base of the second bias transistor, and
a control terminal configured to control a current flowing from the cathode of the first diode to the anode of the second diode.