CPC H01S 5/0261 (2013.01) [H01S 5/04256 (2019.08); H01S 5/0428 (2013.01); H01S 5/423 (2013.01); H01S 5/18311 (2013.01); H01S 2301/176 (2013.01)] | 20 Claims |
1. An optical chip, comprising:
a substrate;
a vertical-cavity surface-emitting laser (VCSEL) structure, the VCSEL structure including:
a first electrode over a first portion of an active layer of the VCSEL structure, and
a second electrode below the substrate;
an isolation region in the substrate; and
a capacitor on the isolation region and over at least a second portion of the active layer of the VCSEL structure that is outside of an active region, the capacitor including:
a first metal layer directly on the isolation region,
a dielectric layer on the first metal layer, and
a second metal layer on the dielectric layer and over the second portion of the active layer,
wherein the isolation region is configured to provide isolation between the capacitor and the substrate.
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