| CPC H01Q 1/38 (2013.01) [G02F 1/13439 (2013.01); H01L 21/045 (2013.01); H01L 27/1237 (2013.01); H01Q 3/34 (2013.01); H01Q 3/44 (2013.01); H01Q 9/0407 (2013.01); G02F 1/133345 (2013.01); G02F 2201/07 (2013.01)] | 13 Claims |

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1. An electronic device, comprising:
a first substrate;
an insulating layer overlapped with the first substrate;
a first conductive layer; and
a second conductive layer contacting with the first conductive layer, wherein the first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer, and the second conductive layer is disposed between the first conductive layer and the insulating layer,
wherein a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer,
wherein the insulating layer comprises a first curved top corner, a first top surface and a first side surface, and the first curved top corner is connected between the first top surface and the first side surface.
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13. An electronic device, comprising:
a first substrate;
an insulating layer overlapped with the first substrate;
a first conductive layer; and
a second conductive layer contacting with the first conductive layer, wherein the first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer, and the second conductive layer is disposed between the first conductive layer and the insulating layer,
wherein a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer,
wherein the first conductive layer comprises a first curved top corner.
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