US 12,266,751 B2
Solid state lighting devices with improved contacts and associated methods of manufacturing
Martin F. Schubert, Sunnyvale, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 11, 2023, as Appl. No. 18/535,564.
Application 15/585,964 is a division of application No. 14/046,719, filed on Oct. 4, 2013, granted, now 9,691,955, issued on Jun. 27, 2017.
Application 14/046,719 is a division of application No. 12/872,092, filed on Aug. 31, 2010, granted, now 8,664,684, issued on Mar. 4, 2014.
Application 18/535,564 is a continuation of application No. 16/132,831, filed on Sep. 17, 2018, granted, now 11,843,084.
Application 16/132,831 is a continuation of application No. 15/585,964, filed on May 3, 2017, granted, now 10,134,968, issued on Nov. 20, 2018.
Prior Publication US 2024/0128425 A1, Apr. 18, 2024
Int. Cl. H01L 33/62 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H10K 50/814 (2023.01)
CPC H01L 33/62 (2013.01) [H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01); H10K 50/814 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A solid state lighting (“SSL”) device, comprising:
an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials;
a first contact on the first semiconductor material; and
a second contact on the second semiconductor material, the second contact including a conductive material encapsulating a plurality of pads of a contact material, the plurality of pads of the contact material being sized to spatially modulate a current density of the SSL structure,
wherein the conductive material includes at least one of tin oxide (ITO), aluminum zinc oxide (AZO), or fluorine-doped tin oxide (FTO), and
wherein the plurality of pads of the contact material extend completely through the conductive material from the second semiconductor material to a conductive surface of the conductive material that is opposite the second semiconductor material.