providing light-emitting diode chips;

providing individual phosphor bodies having applied individual sacrificial layers at top sides of the individual phosphor bodies only;

placing the individual phosphor bodies having the individual sacrificial layers applied on the top sides onto the light-emitting diode chips so that each one of the light-emitting diode chips is provided with one of the individual phosphor bodies having one of the individual sacrificial layers applied on its top side and so that stacks comprising one of the light-emitting diode chips, one of the individual phosphor bodies and one of the individual sacrificial layers result;

molding an encapsulation body directly around the stacks by a film assisted molding so that the stacks are pressed into a molding film, wherein, in places, top faces of the individual sacrificial layers facing away from the individual phosphor bodies remain unsealed with the molding film, and wherein the individual sacrificial layers seal the top sides of the individual phosphor bodies from a material of the encapsulation body; and

removing the individual sacrificial layers so that the top sides of the individual phosphor bodies are free of the individual sacrificial layers,

wherein removing the individual sacrificial layers comprise removing the individual sacrificial layers by wet blasting with at least one liquid,

wherein the wet blasting is performed with deionized water at a temperature of between 60° C. and 95° C., inclusive,

wherein the individual sacrificial layers are applied to the individual phosphor bodies prior to placing the individual phosphor bodies onto the light-emitting diode chips,

wherein the individual sacrificial layers comprise a water-soluble polymer, and

wherein the individual phosphor bodies are ceramic bodies.