US 12,266,739 B2
Solid state transducer dies having reflective features over contacts and associated systems and methods
Martin F. Schubert, Mountain View, CA (US); and Vladimir Odnoblyudov, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 29, 2023, as Appl. No. 18/401,212.
Application 15/269,302 is a division of application No. 13/482,176, filed on May 29, 2012, granted, now 9,450,152, issued on Sep. 20, 2016.
Application 18/401,212 is a continuation of application No. 16/673,092, filed on Nov. 4, 2019, granted, now 11,862,756.
Application 16/673,092 is a continuation of application No. 15/910,994, filed on Mar. 2, 2018, granted, now 10,553,760, issued on Feb. 24, 2020.
Application 15/910,994 is a continuation of application No. 15/269,302, filed on Sep. 19, 2016, granted, now 9,911,903, issued on Mar. 6, 2018.
Prior Publication US 2024/0136473 A1, Apr. 25, 2024
Int. Cl. H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01)
CPC H01L 33/405 (2013.01) [H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/58 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A light emitting diode (LED), comprising:
a transduction structure including a back side, a front side opposite the back side, a first semiconductor material having a surface at the back side, a second semiconductor material having a surface at the front side, and a light-emitting active material between the first and second semiconductor materials; and
an electrical connector including:
a base material extending from the back side of the transduction structure through the first semiconductor material and the active material to the second semiconductor material, the base material electrically isolated from the first semiconductor material and from the active material, the base material electrically coupled to the second semiconductor material, the base material having a top side facing the front side of the transduction structure, and
a reflective material disposed between at least a portion of the base material nearest the front side of the transduction structure and the second semiconductor material, wherein the reflective material covers at least a portion of the top side of the base material.