| CPC H01L 33/38 (2013.01) [H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 33/486 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01)] | 20 Claims | 

| 
               1. A semiconductor light-emitting device, comprising: 
            a substrate; 
                a semiconductor stack on the substrate, and having an active layer, an upper surface, a first side surface and a second side surface opposite to the first side surface; 
                a transparent conductive layer on the upper surface; 
                a first electrode on the transparent conductive layer, and comprising a first bonding portion and a connecting portion between the transparent conductive layer and the first bonding portion; 
                a second electrode having a first portion on the upper surface; and 
                an insulating layer between the semiconductor stack and the second electrode, and covering the first side surface, 
                wherein the semiconductor stack is between the first electrode and the substrate, 
                wherein the transparent conductive layer comprises a third side surface facing the second electrode, and the connecting portion comprises a fourth side surface facing the second electrode, and the fourth side surface is farther from the first side surface than the third side surface to the first side surface, and 
                wherein the transparent conductive layer comprises a first width, the connecting portion comprises a second width, and the first bonding portion comprises a third width, and the first width is larger than the second width and the third width. 
               |