US 12,266,734 B2
Infrared sensor and manufacturing method for the same
Akiharu Miyanaga, Fukuoka (JP); and Tetsuji Ito, Fukuoka (JP)
Assigned to TOPPAN INC., Tokyo (JP)
Appl. No. 17/273,895
Filed by NS Materials Inc., Fukuoka (JP)
PCT Filed Sep. 11, 2019, PCT No. PCT/JP2019/035713
§ 371(c)(1), (2) Date Mar. 5, 2021,
PCT Pub. No. WO2020/054764, PCT Pub. Date Mar. 19, 2020.
Claims priority of application No. 2018-170491 (JP), filed on Sep. 12, 2018.
Prior Publication US 2021/0234056 A1, Jul. 29, 2021
Int. Cl. H01L 31/101 (2006.01); H01L 31/0256 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 31/101 (2013.01) [H01L 31/0256 (2013.01); H01L 31/035218 (2013.01)] 1 Claim
OG exemplary drawing
 
1. An infrared image capture device, comprising:
an infrared sensor comprising a light absorption layer that absorbs an infrared ray; and
a circuit board,
wherein the light absorption layer includes quantum dots,
wherein carriers confined in the quantum dots of the light absorption layer in the infrared sensor are excited when the infrared sensor absorbs the infrared ray,
wherein the infrared ray is detected as a photocurrent on the circuit board,
wherein the quantum dots are spherical in shape,
wherein the quantum dots include at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs,
wherein ligands are provided on surfaces of the quantum dots, the ligands comprising 3-mercaptopropionic acid,
wherein the light absorption layer comprises intermediate layers that are alternatively stacked with at least one quantum dot layer including the quantum dots,
wherein the intermediate layers have a wider band gap than that of the quantum dots of the at least one quantum dot layer,
wherein each quantum dot layer is sandwiched between two of the intermediate layers that are adjacent to upper and lower sides of each quantum dot layer, and
wherein the at least one quantum dot layer includes a far-infrared region that detects a far-infrared ray, a middle-infrared region that detects a middle-infrared ray, and a near-infrared region that detects a near-infrared ray.