US 12,266,733 B2
Methods for growing doped cesium lead halides
Mercouri G. Kanatzidis, Wilmette, IL (US); and Yihui He, Evanston, IL (US)
Assigned to Northwestern University, Evanston, IL (US)
Filed by Northwestern University, Evanston, IL (US)
Filed on Jul. 10, 2023, as Appl. No. 18/219,821.
Application 18/219,821 is a continuation of application No. 17/523,141, filed on Nov. 10, 2021, granted, now 11,749,771.
Application 17/523,141 is a continuation of application No. 16/644,404, granted, now 11,195,967, issued on Dec. 7, 2021, previously published as PCT/US2018/049708, filed on Sep. 6, 2018.
Claims priority of provisional application 62/555,248, filed on Sep. 7, 2017.
Prior Publication US 2023/0378388 A1, Nov. 23, 2023
Int. Cl. H01L 31/08 (2006.01); C30B 11/00 (2006.01); C30B 29/12 (2006.01); G01T 1/24 (2006.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01)
CPC H01L 31/085 (2013.01) [C30B 11/003 (2013.01); C30B 29/12 (2013.01); G01T 1/24 (2013.01); H01L 31/0224 (2013.01); H01L 31/032 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of growing a doped CsPbX3 single crystal, the method comprising:
forming a melt comprising CsX, PbX2, where X is Br or Cl, and a doping species comprising a dopant element from Group 13 or Group 17 of the periodic table; and
growing crystalline doped CsPbX3 from the melt via vertical Bridgman growth.