US 12,266,731 B2
Photovoltaic cell, method for manufacturing same, and photovoltaic module
Ruifeng Li, Zhejiang (CN); Wenqi Li, Zhejiang (CN); Yankai Qiu, Zhejiang (CN); Ning Zhang, Zhejiang (CN); and Bin Li, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on Feb. 28, 2024, as Appl. No. 18/590,798.
Application 18/590,798 is a continuation of application No. 18/336,711, filed on Jun. 16, 2023, granted, now 11,955,571.
Application 18/336,711 is a continuation of application No. 18/146,429, filed on Dec. 26, 2022.
Application 18/146,429 is a continuation in part of application No. 17/857,169, filed on Jul. 4, 2022, granted, now 11,600,731, issued on Mar. 7, 2023.
Application 17/857,169 is a continuation of application No. 17/386,442, filed on Jul. 27, 2021, granted, now 11,437,529, issued on Sep. 6, 2022.
Claims priority of application No. 202011591700.4 (CN), filed on Dec. 29, 2020.
Prior Publication US 2024/0204116 A1, Jun. 20, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0216 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/02168 (2013.01) [H01L 31/02167 (2013.01); H01L 31/1868 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photovoltaic cell, comprising:
a silicon substrate;
a first passivation layer disposed on a front surface of the silicon substrate; and
a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer that are disposed on a rear surface of the silicon substrate in a direction away from the silicon substrate;
wherein the second passivation layer comprises a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm; wherein a number of silicon atoms is greater than a number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than a number of nitride atoms in the at least one silicon oxynitride layer, and a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm; and wherein a ratio of a number of silicon atoms to a number of nitride atoms in the at least one silicon nitride layer is greater than 1 and less than 4, and a thickness of the at least one silicon nitride layer is in a range of 50 nm to 100 nm;
wherein the first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.