US 12,266,730 B2
Nitride semiconductor device
Naohiro Tsurumi, Kyoto (JP); Daisuke Shibata, Kyoto (JP); and Satoshi Tamura, Osaka (JP)
Assigned to PANASONIC HOLDINGS CORPORATION, Osaka (JP)
Appl. No. 17/763,536
Filed by Panasonic Corporation, Osaka (JP)
PCT Filed Aug. 11, 2020, PCT No. PCT/JP2020/030629
§ 371(c)(1), (2) Date Mar. 24, 2022,
PCT Pub. No. WO2021/070469, PCT Pub. Date Apr. 15, 2021.
Claims priority of application No. 2019-185612 (JP), filed on Oct. 9, 2019.
Prior Publication US 2022/0344518 A1, Oct. 27, 2022
Int. Cl. H01L 29/808 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H02M 3/158 (2006.01)
CPC H01L 29/8083 (2013.01) [H01L 29/2003 (2013.01); H01L 29/7788 (2013.01); H01L 29/8122 (2013.01); H02M 3/158 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A nitride semiconductor device comprising:
a substrate;
a first nitride semiconductor layer above the substrate;
a first high-resistance layer above the first nitride semiconductor layer, the first high-resistance layer having a resistance higher than a resistance of the first nitride semiconductor layer;
a first p-type nitride semiconductor layer above the first high-resistance layer;
a first opening penetrating through the first p-type nitride semiconductor layer and the first high-resistance layer to the first nitride semiconductor layer;
an electron transport layer and an electron supply layer provided in stated order from a substrate side, the electron transport layer and the electron supply layer covering an upper portion of the first p-type nitride semiconductor layer and the first opening;
a gate electrode above the electron supply layer and covering the first opening;
a source electrode away from the gate electrode and in contact with the electron supply layer;
a second opening penetrating through the electron supply layer and the electron transport layer to the first p-type nitride semiconductor layer;
a potential fixing electrode in contact with the first p-type nitride semiconductor layer at a bottom part of the second opening; and
a drain electrode below the substrate.