US 12,266,723 B2
Semiconductor device and method for forming the same
Chi-Hsiao Chen, Chiayi (TW); and Kai-Lin Lee, Kinmen County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 6, 2024, as Appl. No. 18/596,643.
Application 18/596,643 is a division of application No. 17/335,026, filed on May 31, 2021, granted, now 11,955,541.
Claims priority of application No. 202110423761.8 (CN), filed on Apr. 20, 2021.
Prior Publication US 2024/0213361 A1, Jun. 27, 2024
Int. Cl. H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/0642 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a buffer layer disposed on the substrate;
a channel layer disposed on the buffer layer;
a barrier layer disposed on the buffer layer;
a first semiconductor gate layer on the barrier layer;
a passivation layer disposed on the barrier layer and covering a top surface and sidewalls of the first semiconductor gate layer; and
a device isolation region enclosing a first device region of the semiconductor device and extending through the passivation layer and the barrier layer and into at least a portion of the channel layer, wherein a damage concentration of the device isolation region varies along a depth direction, and a depth range of a highest damage concentration covers a depth range of a two-dimensional electron gas layer at a junction between the barrier layer and the channel layer.