US 12,266,722 B2
Hemt with plate over channel layer
Po-Yu Yang, Hsinchu (TW); and Hsun-Wen Wang, Taipei (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 21, 2021, as Appl. No. 17/207,719.
Claims priority of application No. 202110156459.0 (CN), filed on Feb. 4, 2021.
Prior Publication US 2022/0246750 A1, Aug. 4, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/66431 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a channel layer disposed on the substrate;
a gate electrode disposed on the channel layer;
a first electrode and a second electrode disposed on the channel layer and respectively at two opposite sides of the gate electrode; and
a metal plate disposed on the channel layer, between the first electrode and the gate electrode, wherein the metal plate comprises a first extending portion and a second extending portion, the second extending portion extends in a vertical direction, and the second extending portion does not directly contact the channel layer, and the first extending portion extends from a sidewall of the first electrode toward the second electrode in a horizontal direction, and the first extending portion does not directly contact the second electrode, wherein the first extending portion does not overlap the first electrode or the second electrode, the first extending portion is spaced from the gate electrode by a distance, and the first extending portion comprises a top surface leveled with top surfaces of the first electrode and the second electrode.