US 12,266,720 B2
Transistors with monocrystalline metal chalcogenide channel materials
Carl Naylor, Portland, OR (US); Chelsey Dorow, Portland, OR (US); Kevin O'Brien, Portland, OR (US); Sudarat Lee, Hillsboro, OR (US); Kirby Maxey, Hillsboro, OR (US); Ashish Verma Penumatcha, Beaverton, OR (US); Tanay Gosavi, Portland, OR (US); Patrick Theofanis, Portland, OR (US); Chia-Ching Lin, Portland, OR (US); Uygar Avci, Portland, OR (US); Matthew Metz, Portland, OR (US); and Shriram Shivaraman, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 21, 2020, as Appl. No. 17/129,486.
Prior Publication US 2022/0199812 A1, Jun. 23, 2022
Int. Cl. H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 21/8256 (2006.01); H01L 27/092 (2006.01); H01L 29/24 (2006.01)
CPC H01L 29/7606 (2013.01) [H01L 21/02568 (2013.01); H01L 21/8256 (2013.01); H01L 27/092 (2013.01); H01L 29/24 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An integrated circuit (IC), comprising:
a plurality of transistor structures, wherein individual ones of the transistor structures occupy an area over a substrate, and wherein within the area, each of the transistor structures comprises:
a channel region, wherein the channel region comprises a monocrystalline metal chalcogenide;
a template region comprising a metal and oxygen, wherein the template region comprises a sidewall in direct contact with the channel region, wherein the template region has a chemical composition distinct from the channel region;
and
a source terminal, a drain terminal, and a gate terminal electrically coupled to the channel region.