US 12,266,718 B2
Voltage-controlled switching device with channel region
Hans-Juergen Thees, Dresden (DE); Alim Karmous, Dresden (DE); and Anton Mauder, Kolbermoor (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 10, 2022, as Appl. No. 17/668,793.
Claims priority of application No. 21157941 (EP), filed on Feb. 18, 2021.
Prior Publication US 2022/0262935 A1, Aug. 18, 2022
Int. Cl. H01L 29/739 (2006.01); H02M 1/08 (2006.01); H03K 17/567 (2006.01)
CPC H01L 29/7397 (2013.01) [H02M 1/08 (2013.01); H03K 17/567 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A voltage-controlled switching device, comprising:
a drain/drift region of a first conductivity type, wherein the drain/drift region is formed in a semiconductor portion;
a channel region, wherein the channel region and the drain/drift region are in direct contact with each other;
a source region of a second conductivity type, wherein the source region and the channel region are in direct contact with each other; and
a gate electrode, wherein the gate electrode and the channel region are capacitively coupled and configured such that, in a an on-state of the voltage-controlled switching device, a first enhancement region of charge carriers corresponding to the first conductivity type forms in the channel region and band-to-band tunneling is facilitated between the source region and the first enhancement region.