US 12,266,716 B2
Finfet with dummy fins and methods of making the same
Chun-Hao Hsu, New Taipei (TW); Yu-Chun Ko, Hsinchu (TW); Yu-Chang Liang, Kaohsiung (TW); and Kao-Ting Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 12, 2023, as Appl. No. 18/332,936.
Application 17/012,222 is a division of application No. 16/261,307, filed on Jan. 29, 2019, granted, now 10,770,571, issued on Sep. 8, 2020.
Application 18/332,936 is a continuation of application No. 17/357,807, filed on Jun. 24, 2021, granted, now 11,677,014.
Application 17/357,807 is a continuation of application No. 17/012,222, filed on Sep. 4, 2020, granted, now 11,049,959, issued on Jun. 29, 2021.
Claims priority of provisional application 62/733,188, filed on Sep. 19, 2018.
Prior Publication US 2023/0327005 A1, Oct. 12, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/0228 (2013.01); H01L 21/31055 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A device comprising:
a dielectric isolation structure disposed on a substrate;
a first fin structure disposed on the substrate and extending through the dielectric isolation structure, the first fin structure including:
a first semiconductor material portion extending from the substrate; and
a first dielectric material portion extending from the first semiconductor portion;
a first dielectric fin structure disposed on the substrate and extending through the dielectric isolation structure, the first dielectric fin structure having a first width and being formed of a second dielectric material portion; and
a second dielectric fin structure disposed on the substrate and extending through the dielectric isolation structure, the second dielectric fin structure having a second width that is different than the first width and being formed of a third dielectric material portion that has a different material composition than the second dielectric material portion, and
wherein the first fin structure, the first dielectric fin structure and the second dielectric fin structure extend to the same height above the substrate.