| CPC H01L 29/6681 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate;
a dielectric isolation structure disposed on the substrate and having a horizontal upper surface;
semiconductor fins protruding from the substrate;
a dummy fin protruding from the dielectric isolation structure and disposed between the semiconductor fins; and
a conducting gate disposed over the semiconductor fins and the dummy fin, the conducting gate contacting the dielectric isolation structure,
wherein a height of the dummy fin above the dielectric isolation structure is greater than a height of the semiconductor fins above the dielectric isolation structure, and
wherein a bottom surface of the dummy fin has a rounded profile.
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