forming a material layer stack comprising a plurality of bilayers, wherein each bilayer is formed by depositing a channel layer comprising a monocrystalline transition metal dichalcogenide (TMD) on a layer of III-N material;

patterning the material layer stack into a block;

forming a dummy gate over a first portion of the block, wherein the dummy gate extends along a direction orthogonal to a length of the block;

forming a dielectric adjacent to the dummy gate and adjacent to the block;

forming a first opening in the dielectric adjacent to a first sidewall of the dummy gate and forming a second opening in the dielectric adjacent to a second sidewall of the dummy gate, wherein the second sidewall is opposite to the first sidewall;

etching and removing the layer of III-N material from the block in the first opening and in the second opening to form a plurality of channel layers;

forming a liner to clad portions of the plurality of channel layers in the first opening and in the second opening;

forming a spacer adjacent to the liner between the plurality of channel layers in the first opening and in the second opening;

forming a gate between each of plurality of channel layers adjacent to the liner after removing the dummy gate; and

forming a first metallization structure adjacent to a first end of the plurality of channel layers and a second metallization structure adjacent to a second end of the plurality of channel layer, wherein the first end and the second end are separated by the gate.