US 12,266,710 B2
Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device
Dukhyun Choe, Suwon-si (KR); Jinseong Heo, Seoul (KR); Taehwan Moon, Suwon-si (KR); and Sanghyun Jo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 3, 2021, as Appl. No. 17/518,015.
Claims priority of application No. 10-2021-0072980 (KR), filed on Jun. 4, 2021.
Prior Publication US 2022/0393016 A1, Dec. 8, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/516 (2013.01) [H01L 29/42392 (2013.01); H01L 29/78391 (2014.09); H01L 29/78618 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A thin film structure comprising:
a substrate; and
a ferroelectric layer on the substrate and comprising a compound having a fluorite structure in which a <001> crystal direction is aligned along a normal direction of the substrate, the ferroelectric layer having an orthorhombic phase and comprising fluorine,
wherein an uppermost atomic layer of the ferroelectric layer includes fluorine.