US 12,266,709 B2
Selective dual silicide formation using a maskless fabrication process flow
Mrunal A. Khaderbad, Hsinchu (TW); Pang-Yen Tsai, Jhubei (TW); and Yasutoshi Okuno, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 19, 2023, as Appl. No. 18/355,211.
Application 17/306,511 is a division of application No. 16/454,871, filed on Jun. 27, 2019, granted, now 10,998,241, issued on May 4, 2021.
Application 18/355,211 is a continuation of application No. 17/306,511, filed on May 3, 2021, granted, now 11,749,682.
Claims priority of provisional application 62/733,185, filed on Sep. 19, 2018.
Prior Publication US 2023/0361125 A1, Nov. 9, 2023
Int. Cl. H01L 29/45 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/45 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first transistor having a first type of conductivity, wherein the first transistor includes: a first source/drain, a first silicide disposed over the first source/drain, a nitride layer disposed over the first silicide, and a first conductive contact disposed over the nitride layer; and
a second transistor having a second type of conductivity that is different from the first type of conductivity, wherein the second transistor includes: a second source/drain, a second silicide disposed over the second source/drain, and a second conductive contact disposed over the second silicide, wherein the first silicide and the second silicide have different geometric profiles in a cross-sectional side view, wherein the second conductive contact has a same material composition as the first conductive contact, and wherein a first number of layers that exist between the first silicide and the first conductive contact is different than a second number of layers that exist between the second silicide and the second conductive contact.