| CPC H01L 29/423 (2013.01) [H01L 29/402 (2013.01)] | 11 Claims |
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1. A semiconductor device, comprising:
lower electrodes including a first electrode and second electrodes disposed around the first electrode with the first electrode as a center;
a first supporter pattern between the lower electrodes at a first height level and in contact with the first electrode;
an upper electrode on the lower electrodes and the first supporter pattern; and
a dielectric layer between the upper electrode and the lower electrodes, and between the upper electrode and the first supporter pattern,
wherein a number of the second electrodes is six,
wherein the second electrodes are spaced apart from the first electrode by a substantially equal distance,
wherein, at the first height level, the first supporter pattern surrounds an entire side surface of the first electrode, and
wherein, at the first height level, a side surface of each of the second electrodes includes a first portion covered by the first supporter pattern and a second portion covered by the dielectric layer.
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