US 12,266,701 B2
High electron mobility transistor and method for forming the same
Chih-Tung Yeh, Taoyuan (TW); Chun-Liang Hou, Hsinchu County (TW); Wen-Jung Liao, Hsinchu (TW); Chun-Ming Chang, Kaohsiung (TW); Yi-Shan Hsu, Taipei (TW); and Ruey-Chyr Lee, Taichung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 18, 2023, as Appl. No. 18/199,359.
Application 18/199,359 is a continuation of application No. 17/029,075, filed on Sep. 23, 2020, granted, now 11,695,049.
Claims priority of application No. 202010799660.6 (CN), filed on Aug. 11, 2020.
Prior Publication US 2023/0290839 A1, Sep. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/4175 (2013.01) [H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/0684 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A high electron mobility transistor, comprising:
a substrate;
a mesa structure disposed on the substrate, wherein the mesa structure comprises a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction;
a passivation layer disposed on the mesa structure; and
at least a contact structure disposed in the passivation layer and the mesa structure, wherein the contact structure comprises a body portion and a plurality of protruding portions, the body portion penetrates through the passivation layer and overlaps and directly contacts the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure, the plurality of protruding portions penetrate through the barrier layer and a portion of the channel layer.