US 12,266,700 B2
Semiconductor nanostructures device structure with backside contact
Huan-Chieh Su, Tianzhong Township, Changhua County (TW); Chun-Yuan Chen, HsinChu (TW); Li-Zhen Yu, New Taipei (TW); Shih-Chuan Chiu, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2024, as Appl. No. 18/655,640.
Application 18/655,640 is a division of application No. 17/212,108, filed on Mar. 25, 2021, granted, now 11,978,773.
Prior Publication US 2024/0290851 A1, Aug. 29, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/41733 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/0665 (2013.01); H01L 29/41775 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a stack of semiconductor nanostructures over a base structure;
a first epitaxial structure and a second epitaxial structure sandwiching the stack of semiconductor nanostructures;
a gate stack wrapped around each of the stack of semiconductor nanostructures;
a backside conductive contact connected to the second epitaxial structure, wherein a first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure; and
an insulating spacer between a sidewall of the base structure and the backside conductive contact.