US 12,266,695 B2
Structures with doped semiconductor layers and methods and systems for forming same
Lucas Petersen Barbosa Lima, Heverlee (BE); Rami Khazaka, Leuven (BE); and Qi Xie, Wilsele (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Feb. 9, 2023, as Appl. No. 18/107,688.
Application 18/107,688 is a division of application No. 17/084,354, filed on Oct. 29, 2020, granted, now 11,594,600.
Claims priority of provisional application 62/930,752, filed on Nov. 5, 2019.
Prior Publication US 2023/0197792 A1, Jun. 22, 2023
Int. Cl. H01L 29/167 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 29/167 (2013.01) [H01L 21/02579 (2013.01); H01L 21/67063 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system comprising:
one or more reaction chambers;
a gas injection system fluidly coupled to at least one of the one or more reaction chambers;
a first gas source;
a second gas source;
a third gas source;
an exhaust source; and
a controller,
wherein the controller is configured to control gas flow into the gas injection system to form a first doped semiconductor layer overlying a surface of a substrate, form a second doped semiconductor layer overlying the first doped semiconductor layer, and form a cap layer overlying the second doped semiconductor layer, and
wherein the first doped semiconductor layer comprises a first dopant and a second dopant, wherein the second doped semiconductor layer comprises the first dopant; wherein the first doped semiconductor layer is selectively formed on a first portion of a surface of the substrate; and, wherein the second doped semiconductor layer is selectively formed overlying the first doped semiconductor layer wherein a concentration of carbon is greater in the first doped semiconductor layer than in the second doped semiconductor layer.