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1. A MOSFET device arranged on a substrate comprising first and second heavily-doped strips respectively covered by first and second contacts, these two strips being spaced apart by a channel that also appears on the substrate, the channel being covered by a dielectric layer, itself surmounted by a third contact; wherein a lightly-doped thin film is located at an interface between the channel and the dielectric layer, wherein dopants of the lightly-doped thin film are distributed on the sides of the interface between the dielectric layer and the channel, and the first and second strips and the thin lightly-doped film present a doping of a same type as the channel, opposed to a doping type of the substrate, in order to create charges that are fixed at the interface between the channel and the dielectric layer so that carriers of said channel are repelled from the fixed charges and thus from the dielectric layer and from its defects.
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