US 12,266,685 B2
Method and device for using a semiconductor component
Daniel Monteiro Diniz Reis, Esslingen Am Neckar (DE); Frank Schatz, Kornwestheim (DE); Mathias Mews, Reutlingen (DE); and Timo Schary, Aichtal-Neuenhaus (DE)
Assigned to ROBERT BOSCH GMBH, Stuttgart (DE)
Filed by Robert Bosch GmbH, Stuttgart (DE)
Filed on Dec. 29, 2021, as Appl. No. 17/564,645.
Claims priority of application No. 10 2021 200 003.7 (DE), filed on Jan. 4, 2021.
Prior Publication US 2022/0216298 A1, Jul. 7, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/75 (2013.01) [H01L 28/55 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer, the method comprising the following steps:
operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode;
determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity;
continuing the operation of the semiconductor component using the first voltage when the condition is not met; and
when the condition is met, ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.