forming a portion of a metallization layer on a substrate;

forming a via layer on the substrate;

forming a first electrode between the metallization layer and the via layer, wherein the first electrode is electrically connected to the metallization layer;

forming a second electrode between the metallization layer and the via layer, wherein the second electrode is electrically connected to the via layer; and

forming a dielectric layer between the first electrode and the second electrode, wherein the first electrode, the dielectric layer, and the second electrode form a metal-insulator-metal (MIM) capacitor;

wherein the first electrode is not electrically connected to any other conductors other than through the metallization layer, and wherein a peripheral boundary of the first electrode encompasses a peripheral boundary of the portion of the metallization layer; and

wherein the second electrode is not electrically connected to any conductors other than through the via layer.