US 12,266,680 B2
Voltage-controlled switching device with resistive path
Christian Philipp Sandow, Haar (DE); Anton Mauder, Kolbermoor (DE); and Franz-Josef Niedernostheide, Hagen a. T.W. (DE)
Assigned to Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed by Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed on Sep. 28, 2021, as Appl. No. 17/487,927.
Claims priority of application No. 20198961 (EP), filed on Sep. 29, 2020.
Prior Publication US 2022/0102478 A1, Mar. 31, 2022
Int. Cl. H01L 29/739 (2006.01); H01L 23/00 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H03K 3/012 (2006.01)
CPC H01L 28/20 (2013.01) [H01L 24/48 (2013.01); H01L 29/0804 (2013.01); H01L 29/086 (2013.01); H01L 29/41741 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H03K 3/012 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48472 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A voltage-controlled switching device, comprising:
a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ;
a source/emitter terminal; and
an emitter channel region between the drain/drift structure and the source/emitter terminal,
wherein a resistive path electrically connects the source/emitter terminal and the emitter channel region,
wherein the resistive path comprises a resistive structure,
wherein the resistive structure is formed between the source/emitter terminal and a semiconducting section,
wherein an electrical resistance of the resistive structure is at least 0.1 mΩ*cm2/AQ.