| CPC H01L 27/14645 (2013.01) [H01L 27/146 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H10K 59/352 (2023.02); H01L 27/1462 (2013.01); H01L 27/14627 (2013.01)] | 17 Claims |

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1. A solid-state imaging device comprising:
a semiconductor region in which a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged;
an antireflection film including a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film; and
a color filter disposed on the antireflection film,
wherein the color filter includes a blue color filter that attenuates light in a wavelength band other than a blue wavelength band among light incident on the blue photodiode, a green color filter that attenuates light in a wavelength band other than a green wavelength band among light incident on the green photodiode and a red color filter that attenuates light in a wavelength band other than a red wavelength band among light incident on the red photodiode,
wherein no lenses are disposed on the blue color filter, the green color filter and the red color filter,
wherein the first insulating film has a film thickness in a blue region through which light received by the blue photodiode is transmitted thinner than a film thickness in a green region through which light received by the green photodiode is transmitted.
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